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Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures (1309.0390v1)
Published 2 Sep 2013 in cond-mat.mes-hall and cond-mat.mtrl-sci
Abstract: In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance.
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