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The dependence of topological Anderson insulator on the type of disorder

Published 28 Dec 2012 in cond-mat.dis-nn and cond-mat.mtrl-sci | (1212.6538v1)

Abstract: This paper details the investigation of the influence of different disorders in two-dimensional topological insulator systems. Unlike the phase transitions to topological Anderson insulator induced by normal Anderson disorder, a different physical picture arises when bond disorder is considered. Using Born approximation theory, an explanation is given as to why bond disorder plays a different role in phase transition than does Anderson disorder. By comparing phase diagrams, conductance, conductance fluctuations, and the localization length for systems with different types of disorder, a consistent conclusion is obtained. The results indicate that a topological Anderson insulator is dependent on the type of disorder. These results are important for the doping processes used in preparation of topological insulators.

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