Digging up bulk band dispersion buried under a passivation layer

Abstract: Atomically controlled crystal growth of thin films has established foundations of nanotechnology aimed at the development of advanced functional devices. Crystallization under non-equilibrium conditions allows engineering of new materials with their atomically-flat interfaces in the heterostructures exhibiting novel physical properties. From a fundamental point of view, knowledge of the electronic structures of thin films and their interfaces is indispensable to understand the origins of their functionality which further evolves into realistic device application. In view of extreme surface sensitivity of the conventional vacuum-ultraviolet (VUV) angle-resolved photoemission spectroscopy (ARPES), with a probing depth of several angstroms, experiments on thin films have to use sophisticated in-situ sample transfer systems to avoid surface contamination. In this Letter, we put forward a method to circumvent these difficulties using soft X-ray (SX) ARPES. A GaAs:Be thin film in our samples was protected by an amorphous As layer with an thickness of $\sim 1$ nm exceeding the probing depth of the VUV photoemission with photon energy $h\nu$ around 100 eV. The increase of the probing depth with increasing $h\nu$ towards the SX region has clearly exposed the bulk band dispersion without any surface treatment. Any contributions from potential interface states between the thin film and the amorphous capping layer has been below the detection limit. Our results demonstrate that SX-ARPES enables the observation of coherent three-dimensional band dispersion of buried heterostructure layers through an amorphous capping layer, breaking through the necessity of surface cleaning of thin film samples. Thereby, this opens new frontiers in diagnostics of authentic momentum-resolved electronic structure of protected thin-film heterostructures.