2000 character limit reached
Vertical Graphene Base Transistor (1112.4520v2)
Published 19 Dec 2011 in cond-mat.mes-hall and cond-mat.mtrl-sci
Abstract: We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off ratios and high current gain. Simulations and small-signal models indicate that it potentially allows THz operation. Based on energy band considerations we propose a specific materials solution that is compatible with SiGe process lines.