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Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

Published 19 Mar 2011 in cond-mat.mtrl-sci | (1103.3768v1)

Abstract: We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such an amplification is actually bounded by the appearance of multi-domain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.

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