2000 character limit reached
Nanostructures in p-GaAs with improved tunability (1005.4799v1)
Published 26 May 2010 in cond-mat.mes-hall
Abstract: A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.
