Evaluate resist printing and the full lithographic process window

Evaluate resist printing and a full lithographic process window for the simulated sub-10-nm aerial images produced by the two-mirror faceted EUV projection system.

Background

The conclusion reports simulated aerial images, including a central peak of approximately 5.4 nm FWHM and two 6-nm-wide lines separated by a 6-nm space. These results concern optical aerial intensity rather than resist development or printed features. The paper therefore leaves unresolved whether the projected images can be transferred into resist and what complete process window would support such printing.