Microscopic origin of polarity reversal in Cr-doped MnAlGe

Determine the microscopic mechanism responsible for anomalous Nernst-effect sign reversal in Cr-doped MnAlGe and characterize its relation to the underlying topological nodal-line electronic structure.

Background

The paper compares its Al/Ge compositional-tuning strategy with earlier approaches to anomalous Nernst-effect polarity control, including Cr-doped MnAlGe. Although Cr-doped MnAlGe exhibits polarity tuning within the same material family, the microscopic origin of its sign reversal and the connection between that reversal and the material’s topological nodal-line electronic structure have not been established. The present study does not resolve this issue because it focuses on Al/Ge substitution and its associated sublattice-selective carrier doping.