Photocurrent Enhancement due to Spin-Exchange Carrier Multiplication in Films of Manganese-Doped 'Inverted' CdSe/HgSe Quantum Dots (2412.16371v1)

Abstract: Incorporation of manganese impurities into II-VI semiconductors results in a dramatic change in their properties due to strong exchange interactions between the Mn ion and the semiconductor host. In colloidal quantum dots (QDs), these interactions result in a rapid bidirectional energy transfer between the magnetic impurity and the QD intrinsic states, which is characterized by an extremely high energy transfer rate of more than ~5 eV/ps. This rate is higher than the rate of energy loss due to phonon emission (typically, ~1 eV/ps or less), so Mn-QD interactions could in principle be used to capture and utilize the kinetic energy of the hot carrier before it is lost to phonons. Here, we demonstrate that by using Mn-doped CdSe/HgSe core/shell QDs, we can efficiently convert the kinetic energy of a hot exciton into an additional electron-hole pair (exciton). This carrier multiplication process occurs through rapid capture of a hot exciton by a Mn ion, which then undergoes spin flip relaxation, producing two excitons near the QD band edge. Due to the inverted geometry of the CdSe/HgSe QDs, both electrons and holes resulting from carrier multiplication occupy the QD shell, allowing them to be easily extracted from the QD for potential use in electro-optical devices or chemical reactions.