Quantum Light Generation based on GaN Microring towards Fully On-chip Source
Abstract: Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential towards the monolithic integration of quantum light source.~In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5$\pm$6.5%, which is further configured to generate heralded single photon with a typical heralded second-order auto-correlation $g{(2)}_{H}(0)$ of 0.045$\pm$0.001. Our results pave the way for developing chip-scale quantum photonic circuit.
- K. Wu and A. W. Poon, Stress-released Si3N4𝑆subscript𝑖3subscript𝑁4Si_{3}N_{4}italic_S italic_i start_POSTSUBSCRIPT 3 end_POSTSUBSCRIPT italic_N start_POSTSUBSCRIPT 4 end_POSTSUBSCRIPT fabrication process for dispersion-engineered integrated silicon photonics, Opt. Express 28, 17708 (2020).
- J. R. Hance, G. F. Sinclair, and J. Rarity, Backscatter and spontaneous four-wave mixing in micro-ring resonators, Journal of Physics: Photonics 3, 025003 (2021).
- H. Harima, Properties of GaN and related compounds studied by means of raman scattering, Journal of Physics: Condensed Matter 14, R967 (2002).
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