Berry curvature dipole and nonlinear Hall effect in two-dimensional Nb$_{2n+1}$Si$_n$Te$_{4n+2}$ (2301.00946v1)

Abstract: Recent experiments have demonstrated interesting physics in a family of two-dimensional (2D) composition-tunable materials Nb${2n+1}$Si$_n$Te${4n+2}$. Here, we show that owing to its intrinsic low symmetry, metallic nature, tunable composition, and ambient stability, these materials offer a good platform for studying Berry curvature dipole (BCD) and nonlinear Hall effect. Using first-principles calculations, we find that BCD exhibits pronounced peaks in monolayer Nb${3}$SiTe${6}$ ($n=1$ case). Its magnitude decreases monotonically with $n$ and completely vanishes in the $n\rightarrow\infty$ limit. This variation manifests a special hidden dimensional crossover of the low-energy electronic states in this system. The resulting nonlinear Hall response from BCD in these materials is discussed. Our work reveals pronounced geometric quantities and nonlinear transport physics in Nb${2n+1}$Si$_n$Te${4n+2}$ family materials, which should be readily detected in experiment.