3T-1R Analog Write and Digital Read of MRAM for RNG and Low Power Memory Application (2204.14204v1)

Abstract: This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic tunnel junction (MTJ), is detected within only a single computational period. The period contains two sub-cycles: write and joined read & reset cycles. The operation with MTJ becomes stochastic, independent after calibrating at the desired working point against the factors, which can induce the signal deviations, e.g. temperature, material degradation or external magnetic field.