Nanocryotron-driven Charge Configuration Memory (2203.14586v1)

Abstract: Cryo-computing is presently severely limited by the absence of a suitable fast and energy efficient cryo-memory. Ideally, such memory should be compatible with single-flux quantum (SFQ) logic in terms of speed, switching energy and matching impedance. Here we present an implementation of non-volatile charge configuration memory (CCM) in a cryo-computing environment by combining it in parallel with a pulse-triggered superconducting nanowire cryotron (nTron). The combined device is modeled in terms of the dynamical response of the SC order parameter in a current-controlled nanowire with a CCM shunt. Analysis of timedynamics and current-voltage characteristics based on measured device parameters show that single flux quantum (SFQ)-level pulses can drive non-volatile CCM on the picosecond timescale, while allowing the nTron to operate in non-latching mode. The inherent high energy efficiency and ultrahigh speed makes this hybrid device an ideal memory for use in cryo-computing and quantum computing peripheral devices.