Ferroelectric Tunneling Junctions for Edge Computing

Published 5 Jul 2021 in cs.ET and physics.app-ph | (2107.01853v1)

Abstract: Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.

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