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Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies (2105.00864v1)
Published 3 May 2021 in cs.ET
Abstract: The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle and the modelling of some novel ferroelectric based devices, with an emphasis on energy efficiency and on applications to new computational paradigms.