Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Abstract: The performance of ultra-wide band gap materials like $\beta$-Ga$\mathrm{2}$O$\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (L$\mathrm{gd}$) of 6 um and 0.6 um respectively in $\beta$-Ga$\mathrm{2}$O$\mathrm{3}$, at a high channel sheet charge density of 1.8x10$^\mathrm{13}$cm$^\mathrm{-2}$. The high sheet charge density together with high breakdown field enabled a record power figure of merit (V$^\mathrm{2}$$\mathrm{br}$/R$\mathrm{on}$) of 376 MW/cm$^\mathrm{2}$ at a gate-drain spacing of 3 um.