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Performance of Irradiated RD53A 3D Pixel Sensors

Published 12 Mar 2019 in physics.ins-det and hep-ex | (1903.04838v2)

Abstract: The ATLAS experiment at the LHC will replace its current inner tracker system for the HL-LHC era. 3D silicon pixel sensors are being considered as radiation-hard candidates for the innermost layers of the new fully silicon-based tracking detector. 3D sensors with a small pixel size of $\mathrm{50 \times 50~\mu m{2}}$ and $\mathrm{25 \times 100~\mu m{2}}$ compatible with the first prototype ASIC for the HL-LHC, the RD53A chip, have been studied in beam tests after uniform irradiation to $\mathrm{5 \times 10{15}~n_{eq}/cm{2}}$. An operation voltage of only 50 V is needed to achieve a 97% hit efficiency after this fluence.

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