2000 character limit reached
Transport properties of a 3D topological insulator based on a strained high mobility HgTe film (1306.3347v2)
Published 14 Jun 2013 in cond-mat.mes-hall
Abstract: We investigated the magnetotransport properties of strained, 80nm thick HgTe layers featuring a high mobility of mu =4x105 cm2/Vs. By means of a top gate the Fermi-energy is tuned from the valence band through the Dirac type surface states into the conduction band. Magnetotransport measurements allow to disentangle the different contributions of conduction band electrons, holes and Dirac electrons to the conductivity. The results are are in line with previous claims that strained HgTe is a topological insulator with a bulk gap of ~15meV and gapless surface states.