2000 character limit reached
Field-effect tunneling transistor based on vertical graphene heterostructures (1112.4999v1)
Published 21 Dec 2011 in cond-mat.mes-hall and cond-mat.mtrl-sci
Abstract: We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron nitride acting as a tunnel barrier. They exhibit room temperature switching ratios ~50, a value that can be enhanced further by optimizing the device structure. These devices have potential for high frequency operation and large scale integration.