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Site-Selected Nanowire Waveguide

Updated 11 January 2026
  • Site-selected nanowire waveguide is a nanoscale photonic structure engineered with sub-100 nm precision to optimize spatial positioning and modal overlap for quantum emitters.
  • It employs advanced fabrication methods such as selective-area epitaxy, AFM manipulation, and direct laser writing to achieve deterministic placement and high coupling efficiency.
  • Its design underpins efficient single-photon sources, reconfigurable quantum photonic circuits, and integrated systems with enhanced emission control and directional output.

A site-selected nanowire waveguide is a nanoscale photonic structure in which both the spatial position and geometric dimensions of a single semiconductor nanowire (NW)—often containing an embedded quantum emitter such as a quantum dot (QD)—are engineered with high precision to control its optical waveguiding properties and coupling to external photonic components. This deterministic positioning and tailoring of the nanowire enables high modal overlap with desired electromagnetic modes, efficient photon routing, and integration with diverse optoelectronic and quantum photonic platforms. The approach encompasses epitaxial, direct-write, and nano-manipulation-based methods for achieving spatial and modal site selectivity across III-V, II-VI, wide-bandgap, and polymeric material systems.

1. Site-Selective Fabrication and Material Platforms

The defining feature of site-selected nanowire waveguides is the ability to determine the nanowire’s lateral and vertical position, as well as its diameter and length, at the sub-100 nm scale. For III-V nanowires, selective-area vapor–liquid–solid (SA-VLS) or chemical-beam epitaxy uses pre-patterned dielectric masks (e.g., SiO₂) with lithographically defined apertures (hole diameters 100–300 nm, spacing set by application) to localize NW growth sites. For example, InAsP quantum dots can be axially inserted into InP nanowires precisely at designed positions within the core during VLS growth, with the dot composition and emission wavelength tuned by the AsH₃ flow and dot-formation time. Site selection can also be realized post-growth by AFM-based nanomanipulation of preformed nanowires onto photonic circuits, as in the deterministic placement of InAsP/InP NWs into grooves in silicon photonic crystals or atop SiN nanowaveguides, enabling hybrid integration and evanescent coupling (Yeung et al., 2023, Birowosuto et al., 2014).

Alternatively, top-down and additive approaches such as direct laser writing (DLW) of polymer nanowires (IP-Dip resin) directly above pre-located QDs, registered via fiducial metallic nanorings, afford single-mode waveguide formation aligned to the emitter within ~50 nm (Perez et al., 2023). Wide bandgap ZnO and CdSe/CdS nanowires can be site-selected by a combination of drop-casting, confocal mapping, and electron-beam lithographic overlay (Geng et al., 2015, Vitale et al., 2022).

2. Waveguide Modal Properties and Photonic Design

Waveguiding in site-selected nanowire systems is dominated by the fundamental HE₁₁ or TE₀₁ modes, depending on cross-sectional geometry and refractive index contrast. For a cylindrical InP core (n≈3.2) in air, the normalized V-number

V=2πDλncore2nclad2V = \frac{2\pi D}{\lambda} \sqrt{n_{\rm core}^2 - n_{\rm clad}^2}

gives single-mode cutoff at V2.405V \lesssim 2.405. The optimal diameter-to-wavelength ratio for maximum emission into HE₁₁ is D/λ0.23D/\lambda \approx 0.23, yielding β\beta-factors up to 95% and normalized emission rates F(D/λ)0.9F(D/\lambda) \sim 0.9 (Haffouz et al., 2018). Similar modal analysis applies to polymer waveguides, with np1.52n_p \approx 1.52 yielding neff1.35n_{\rm eff} \approx 1.35 for D=700D=700 nm at λ=950\lambda=950 nm (Perez et al., 2023).

For plasmonic and distributed-feedback (DFB) enhanced systems, hybridization between guided dielectric modes and localized surface plasmons on metallic gratings (e.g., Al gratings under ZnO wires) is engineered by orienting the NW axis perpendicular to the grating ridges. The Bragg condition,

2Λneff=mλ2\Lambda n_{\rm eff} = m\lambda

with Λ\Lambda grating period and mm diffraction order, enables mode selection and feedback control (Vitale et al., 2022).

In hybrid integration scenarios such as NW-on-SiN waveguides, adiabatic tapers transform the NW HE₁₁ profile to the underlying TE₀ strip-mode, with calculated coupling efficiencies η>90%\eta > 90\% over 15 μm taper lengths (Yeung et al., 2023).

3. Spontaneous Emission Enhancement and Photon Collection

A principal advantage of site-selected nanowire waveguides is the dramatic emission rate enhancement and photon extraction efficiency for embedded quantum emitters. For tailored InAsP/InP nanowires, optimizing D/λD/\lambda enhances the single-photon count rate from 0.4 to 35 kcps at telecom O-band for D=350D=350 nm and λ=1.3\lambda=1.3 μm, a 35-fold increase over untuned geometries (Haffouz et al., 2018). Polymer nanowire waveguides fabricated above pre-characterized QDs enhance fiber-coupled photon collection by a factor of 3.0±0.73.0 \pm 0.7 compared to nanoring-only references, with FDTD-predicted coupling efficiencies to single-mode fiber reaching 8.5×\sim 8.5 \times the flat GaAs reference (Perez et al., 2023).

Cavity-enhanced designs allow further suppression of the radiative lifetime and improvement of photon indistinguishability. For example, quasi-BIC (bound-state in continuum) cavities formed by strong coupling of HE₁₁ and EH₁₁ modes in InP hexagonal wires on gold mirrors deliver Purcell factors FP17F_P \approx 17 with Q225Q \sim 225, bandwidth Δλ4\Delta\lambda \sim 4 nm, and light extraction efficiency ηext74%\eta_{\rm ext} \sim 74\% into NA=0.8, with 88%\sim 88\% mode overlap to a Gaussian far field (Gangopadhyay et al., 7 Jan 2026). In high-Q photonic crystal nanowire cavities, Qth3.3×104Q_{\rm th} \sim 3.3 \times 10^4 enables FP102103F_P \sim 10^2 - 10^3 and spontaneous emission lifetimes as short as 91 ps (Birowosuto et al., 2014).

4. Control of Emission Directionality and Far-Field Profiles

Precise site selection enables not only optimal emitter-mode overlap but also advanced control over far-field emission profiles via near-field engineering and waveguide arraying. InP nanowire lasers, lithographically grown in designed pairs and arrays, exploit TE₀₁ supermode splitting to transform the single-NW doughnut far-field pattern (azimuthally uniform) into double-lobed beams, with steerable emission determined by the controlled NW gap (dd). The interference angle θ\theta of the emission lobes satisfies

sinθλ2d\sin\theta \approx \frac{\lambda}{2d}

allowing programmable beaming and directionality (Jäger et al., 24 Jul 2025).

Metasurface action is achieved by arraying site-selected NW pairs (unit cell pitch a=1000a=1000 nm), narrowing the main-lobe azimuthal width by a factor $1/N$ for N×NN\times N arrays, with beam steering possible by altering array phase gradients.

5. Hybrid and Reconfigurable Integration Schemes

Site-selected nanowire waveguides support integration into a variety of photonic architectures. Movable and reconfigurable elements are enabled by AFM-based nanowire transfer, allowing NW resonators or single photon sources to be positioned, removed, or multiplexed on photonic crystal or SiN waveguides (Birowosuto et al., 2014, Yeung et al., 2023). Tapered nanowires, site-placed onto SiN waveguides, achieve evanescent mode transfer exceeding 90% with direct measurement of first-lens count rates near 13 Mcps and source efficiencies ηs16%\eta_s \sim 16\% (Yeung et al., 2023). Direct write polymer waveguides are additively printed above pre-existing in-plane photonic structures, maintaining compatibility with established top-down nanofabrication and allowing assembly of high-yield arrays (Perez et al., 2023).

Hybrid plasmonic-dielectric systems, e.g., ZnO NWs on fenced metal gratings, provide distributed feedback for quasi-single-mode lasing with per-period reflectance 50%\approx 50\%, and tunable mode selection via the Bragg condition (Vitale et al., 2022).

6. Performance Metrics, Limitations, and Scalability

Site-selected nanowire waveguides are primarily characterized by the β\beta-factor (fraction of spontaneous emission coupled to the guided mode), Purcell enhancement FPF_P, coupling and extraction efficiency η\eta, Q-factor (in cavity-enhanced systems), operational bandwidth, and indistinguishability/entanglement fidelity for single or entangled photon sources. Tolerances to growth imperfection are high; e.g., top facet “crown” heights up to 90 nm and off-axis QD displacements to 100 nm still yield FP>10F_P > 10 (Gangopadhyay et al., 7 Jan 2026).

Crosstalk and mode competition are suppressed by careful site selection in multi-element arrays and by periodic feedback engineering in DFB configurations. Limitations arise from material absorption, mode mismatch, and environmental noise (e.g., charge noise, spectral diffusion), which can be mitigated through surface passivation, electrical gating, or resonant excitation (Yeung et al., 2023).

Scalability is intrinsic to deterministic site control: wafer-scale arrays of nanowires or quantum emitters can be patterned and vertically or horizontally integrated into complex photonic circuits, supporting multiplexing and on-chip quantum resource deployment.

7. Applications and Future Outlook

Site-selected nanowire waveguides underpin bright, highly efficient, and directionally controlled single-photon sources at wavelengths spanning UV, visible, O-, and C-bands. They enable on-demand sources for fiber-based and on-chip quantum networks, reconfigurable and multiplexed photonic logic, plug-and-play quantum node architectures, distributed feedback lasing, and programmable beam-steering metasurfaces (Haffouz et al., 2018, Jäger et al., 24 Jul 2025, Gangopadhyay et al., 7 Jan 2026). The compatibility of deterministic nanowire site selection with both bottom-up epitaxial and additive fabrication approaches facilitates hybrid integration with III-V, dielectric, and plasmonic platforms.

Continued advancements in geometrically engineered quasi-BIC cavities, hybrid plasmonic feedback, and reconfigurable assembly are poised to further enhance photon indistinguishability, entanglement fidelity, and device yield, with direct impact on scalable quantum information science and integrated classical photonics.

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