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Inverse Mean Valley

Updated 7 July 2026
  • Inverse Mean Valley describes reciprocal processes across disciplines, such as converting valley imbalances into transverse electrical signals in 2D materials like MoS₂.
  • The topic encompasses nonlinear valley responses where distinct symmetry characteristics yield higher-harmonic voltage signals, advancing electrical detection and signal engineering.
  • Applications include inverse design in valley-Hall photonic crystals, inverse mean molecular-weight trends in exoplanet atmospheres, and inverse mean value properties in PDE analysis and sensing.

“Inverse Mean Valley” is an ambiguous expression used in several technically unrelated literatures. In electronic valleytronics, it denotes the inverse valley Hall effect (IVHE), the reciprocal conversion of a valley imbalance into a transverse electrical signal. In nonlinear valley transport, it extends to nonlinear inverse valley responses with symmetry properties distinct from the direct nonlinear valley Hall effect. In topological photonics, the phrase arises through inverse design of valley-Hall photonic crystals with prescribed pseudospin states. In exoplanet science, it describes an inverse relationship between planet size and atmospheric mean molecular weight across the radius valley. In analysis, it evokes inverse mean value properties that characterize domains through harmonic or panharmonic test functions. In deep sub-electron read-noise sensing, it appears as an “Inverse Mean Valley” ratio derived from valley-peak modulation.

1. Electronic inverse valley Hall conversion in monolayer MoS2_2

In monolayer MoS2_2, the valley degree of freedom is associated with the inequivalent KK and KK' extrema of the Brillouin zone. Broken inversion symmetry produces finite Berry curvature near these valleys, while time-reversal symmetry enforces the valley-contrasting relation Ω(K)=Ω(K)\Omega(K)=-\Omega(K'). Under an in-plane electric field, the anomalous velocity is

va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),

so carriers from KK and KK' acquire equal and opposite transverse velocities. The result is a charge-neutral valley current transverse to the applied field, i.e. the valley Hall effect (VHE). The inverse process, IVHE, converts a diffusing valley imbalance or valley current into a transverse electric field and a measurable nonlocal voltage. The intrinsic Hall conductivity is written as

σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),

and the valley Hall angle is

θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.

The nonlocal detection geometry used for monolayer MoS2_20 implements electrical generation and electrical detection without optical pumping. A representative Hall-bar device on 2_21 nm SiO2_22/Si has 2_23, 2_24, 2_25, and injector–detector separation 2_26, with Ti/Au 2_27 contacts. In the Type I nonlocal configuration, a DC source–drain bias 2_28 drives a local charge current at the injector, the VHE launches a transverse valley current, and IVHE at the detector converts the arriving valley imbalance into an open-circuit nonlocal voltage 2_29. In the small-angle, narrow-arm limit, a widely used scaling form is

KK0

where KK1 is the diffusion constant and KK2 the intervalley relaxation time. The full self-consistent expression used in the experiment includes finite KK3 and KK4 and the feedback of VHE/IVHE at injector and detector (Hung et al., 2018).

The reported signals are much larger than the Ohmic background. Monolayer devices exhibit KK5 at KK6 and KK7 at KK8, detected KK9 from the injector. A SPICE resistor-network using measured KK'0 and KK'1 predicts an Ohmic nonlocal voltage of KK'2 for the same geometry and KK'3, consistent with multilayer control devices that show only KK'4–KK'5. The extracted valley Hall angle is KK'6 at KK'7. The valley diffusion length grows as temperature decreases, with KK'8 experimentally in the high-KK'9 regime, consistent with an analytic phonon-scattering result Ω(K)=Ω(K)\Omega(K)=-\Omega(K')0, and reaches Ω(K)=Ω(K)\Omega(K)=-\Omega(K')1 at low temperature. In-plane magnetic fields up to Ω(K)=Ω(K)\Omega(K)=-\Omega(K')2 do not affect Ω(K)=Ω(K)\Omega(K)=-\Omega(K')3, ruling out spin Hall contributions. A common misconception is that valley polarization in MoSΩ(K)=Ω(K)\Omega(K)=-\Omega(K')4 must be optically generated; this work establishes purely electrical VHE generation and IVHE detection at room temperature (Hung et al., 2018).

2. Nonlinear inverse valley responses and harmonic nonlocal transport

For linear nonlocal valley transport, the direct and inverse processes are reciprocal. In a strip geometry, the linear VHE and linear IVHE are written as

Ω(K)=Ω(K)\Omega(K)=-\Omega(K')5

and Onsager reciprocity gives Ω(K)=Ω(K)\Omega(K)=-\Omega(K')6. The nonlinear case is different. The nonlinear valley Hall effect (NVHE) is valley-odd,

Ω(K)=Ω(K)\Omega(K)=-\Omega(K')7

whereas the nonlinear inverse valley Hall effect needed for nonlocal voltage generation must be valley-even: Ω(K)=Ω(K)\Omega(K)=-\Omega(K')8 This distinction is not a minor formal point. The direct nonlinear coefficient Ω(K)=Ω(K)\Omega(K)=-\Omega(K')9 and the inverse nonlinear coefficient va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),0 have distinct symmetry character, distinct microscopic mechanisms, and are not reciprocal to one another. In the symmetry analysis of two-valley, time-reversal-invariant systems, va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),1 is forbidden by inversion va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),2 and the twofold rotation va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),3, while the relevant NVHE tensor components can remain allowed even when linear VHE is symmetry-forbidden (Cao et al., 24 Feb 2025).

The nonlocal transport theory predicts distinct harmonic content under low-frequency AC drive. Linear valley transport appears at va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),4. Mixed nonlinear/linear pathways appear at va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),5 and va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),6. Signals involving nonlinear inverse conversion appear at va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),7 and va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),8. The theory gives, for example,

va=eE×Ωn(k),\mathbf{v}_a=-\frac{e}{\hbar}\,\mathbf{E}\times \boldsymbol{\Omega}_n(\mathbf{k}),9

and

KK0

The change from KK1 to KK2 is a diagnostic consequence of the nonlinear inverse stage. The same framework predicts sizable KK3 and KK4 nonlocal voltages in bilayer KK5-WTeKK6, with KK7 and KK8 for detector spacing KK9 under the parameter set quoted for that material (Cao et al., 24 Feb 2025).

The experimental observation of giant nonlinear valley Hall transport in graphene–hBN moiré superlattices supplies the corresponding nonlocal phenomenology. In a monolayer graphene strip of width KK'0, with ultrahigh mobility KK'1, AC frequency KK'2, and injector–detector spacing KK'3, the first-, second-, third-, and fourth-harmonic nonlocal voltages satisfy

KK'4

The corresponding nonlocal resistances scale as KK'5, KK'6, KK'7, and KK'8. KK'9 exhibits opposite-signed peaks on the two sides of the Dirac gap, and σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),0 exceeds σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),1 near Dirac points for σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),2. The measured valley diffusion length is σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),3. A common misconception is that a nonlinear inverse response should be the direct nonlinear response run backward; the combined theory and experiment show that the nonlinear inverse channel is symmetry-distinct, and that its signatures are encoded in the higher harmonics of the nonlocal voltage (He et al., 5 Mar 2025).

3. Inverse design in valley-Hall topological photonic crystals

In valley photonic crystals (VPCs), the relevant “valley” structure is photonic rather than electronic. Two-dimensional photonic crystals with inequivalent extrema at σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),4 and σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),5 can acquire localized Berry curvature when inversion symmetry is broken in lattices with σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),6 symmetry. A domain wall between two VPCs with opposite valley topological phases supports topological kink states. In this context, the “inverse” aspect is not inverse Hall conversion but inverse design: the target is to engineer unit cells whose band-edge pseudospin states and valley topological phases are specified in advance.

The framework is formulated in the frequency domain. The electromagnetic eigenproblem is

σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),7

with Bloch boundary conditions

σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),8

For the 2D TM formulation, the driven Helmholtz equation for σxy(EF)=e2nd2k(2π)2Ωn(k)f(En,k),\sigma_{xy}(E_F)=\frac{e^2}{\hbar}\sum_n \int \frac{d^2\mathbf{k}}{(2\pi)^2}\,\Omega_n(\mathbf{k})\, f(E_{n,\mathbf{k}}),9 is used, and the in-plane magnetic field follows from

θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.0

The design variable is a density field θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.1, with

θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.2

where θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.3 and θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.4. Pseudospin is enforced through the normalized transverse spin angular momentum

θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.5

with θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.6. The complete optimization uses θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.7, θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.8, and θvσxyσxx.\theta_v \equiv \frac{\sigma_{xy}}{\sigma_{xx}}.9, together with driven solves at 2_200, 2_201, 2_202, and 2_203, near 2_204, 2_205, and 2_206. COMSOL Multiphysics and globally convergent MMA are used, with PDE-based filtering, Heaviside projection, minimum-length-scale constraints, and artificial damping 2_207 with 2_208 (Sato et al., 28 Mar 2025).

Two optimized unit cells illustrate arbitrary pseudospin assignment across multiple bands: PC1 has target pseudospins 2_209, and PC2 has 2_210. Both exhibit a lower band gap near 2_211 and a higher band gap near 2_212. Berry curvature, computed from discrete Wilson loops on a 2_213 2_214-grid, is localized near 2_215 and 2_216; PC1 and PC2 share the same valley phase in the first band but differ in the fourth. Domain-wall supercells then realize selective kink states: PC12_217PC2 supports kink states only in the higher gap, whereas PC22_218PC1′ supports them only in the lower gap. In a composite router, an input at 2_219 activates the upper path with transmittance 2_220, while an input at 2_221 activates the lower path with transmittance 2_222. The significance of this literature is terminological rather than reciprocal: “inverse” denotes inverse design, and “valley” refers to photonic 2_223 band topology rather than electronic IVHE (Sato et al., 28 Mar 2025).

In exoplanet science, “inverse mean valley” refers to a gradient of atmospheric mean molecular weight across the radius valley. The radius valley, or Fulton gap, is the dearth of planets around 2_224–2_225 Earth radii separating rocky super-Earths from sub-Neptunes that retain significant H/He envelopes. The CHOSSi outgassing model links radius-valley constraints to atmospheric chemistry by combining carbon–hydrogen–oxygen–sulfur–silicon equilibrium chemistry, non-ideal fugacities at high pressure, and dissolution of water and hydrogen into melt. The underlying readout from radius-valley population inference is that, for 2_226, atmospheric surface pressures are 2_227–2_228 bar and melt temperatures are 2_229–2_230 K, both decreasing with radius (Heng et al., 3 Apr 2025).

The chemical system includes gas-phase species H2_231, H2_232O, CH2_233, CO, CO2_234, O2_235, S2_236, SO2_237, H2_238S, SiO, and SiH2_239. Equilibrium is solved through Gibbs free-energy minimization and equilibrium constants 2_240, while non-ideal behavior is encoded through fugacity 2_241. Water and hydrogen dissolution are modeled with

2_242

The mean molecular weight is

2_243

with He neglected as a minor correction. Lower 2_244 and lower retained H/He shift equilibrium toward heavier oxidized molecules and away from H2_245 and CH2_246, especially at higher oxygen fugacity 2_247.

The predicted trend is explicitly inverse: 2_248. On the large side of the valley, 2_249, atmospheres remain nearly H2_250-dominated with 2_251–2_252. On the small side and across the valley, 2_253, 2_254–2_255 is common, and the upper envelope reaches 2_256–2_257 under oxidized conditions and low 2_258/high 2_259. The crucial control is oxygen fugacity, not carbon enrichment: the strength of the 2_260 gradient is primarily driven by 2_261, whereas the upper 2_262 envelope shows minimal correlation with C/H. This directly addresses a common misconception that “metallicity” is the primary driver. Observationally, increasing 2_263 from 2_264 to 2_265 reduces the scale height 2_266 and the amplitudes of transmission features by 2_267, implying an inverse-amplitude trend across the radius valley. The paper identifies CH2_268/CO2_269 as especially sensitive to 2_270 and proposes JWST and ARIEL retrievals as tests of the predicted inverse mean-molecular-weight valley (Heng et al., 3 Apr 2025).

5. Inverse mean value properties in elliptic PDE

In analysis, the relevant concept is “inverse mean value,” not a valley degree of freedom. For harmonic functions, the classical mean value property states that if 2_271 in a domain 2_272, then

2_273

for every admissible ball 2_274. Inverse mean value theorems reverse this logic: if a domain-wide averaging identity holds for every function in an appropriate PDE class, then the domain must be geometrically rigid, typically a ball. The survey literature reviews such results for harmonic and panharmonic functions and extends them to annuli, strips, and cylinders in the harmonic case (Kuznetsov, 2022).

For the modified Helmholtz equation,

2_275

the ball mean value formula acquires a Bessel weight. Writing

2_276

one has

2_277

whenever 2_278 solves the modified Helmholtz equation and 2_279. The function 2_280 is monotone increasing on 2_281, satisfies 2_282, and diverges as 2_283. A canonical positive radial solution is

2_284

with 2_285 and 2_286 (Kuznetsov, 2021).

The central Kuran-type theorem states that if 2_287, 2_288, is bounded, its complement is connected, 2_289 satisfies 2_290, and there exists 2_291 such that

2_292

for every positive function 2_293 satisfying 2_294 in the dilated domain 2_295, then—together with the additional volume condition when 2_296—one must have 2_297. The proof compares 2_298 and 2_299 in the two geometric cases KK00 and KK01, using the strict radial monotonicity of KK02. The survey further notes that Kuran’s original harmonic theorem, Bennett’s equality of volume and surface means, and inverse results for annuli and strips belong to the same family, while panharmonic analogues for annuli and strips remain open in that account (Kuznetsov, 2021, Kuznetsov, 2022).

6. Valley-peak modulation, phase-space invariance, and inverse read-noise mapping

In deep sub-electron read-noise CMOS sensing, “Inverse Mean Valley” is a reparameterization of valley-peak modulation (VPM). The standard amplitude-domain Poisson–Gaussian model is

KK03

where KK04, KK05, KK06 is the conversion gain, KK07 is the DC offset, and KK08 is the input-referred read noise. A representative valley-peak modulation metric is

KK09

with KK10 and KK11 the two tallest neighboring peaks and KK12 the intervening valley. In the deep sub-electron read-noise regime, Starkey and Fossum derived exposure-independent approximations such as

KK13

but the exact amplitude-domain quantity still depends on both KK14 and KK15 (Hendrickson et al., 1 Mar 2026).

The phase-space construction removes exposure exactly by quotienting out the integer photoelectron lattice. Defining

KK16

the phase variable has a wrapped-Gaussian density independent of KK17: KK18 The phase-space peak and valley heights are

KK19

so the exposure-invariant phase-space VPM is

KK20

Using the inverse elliptic nome, the read-noise inversion is

KK21

with KK22 the complete elliptic integral of the first kind.

The “Inverse Mean Valley” form is then simply the reciprocal peak-to-valley normalization. In the amplitude domain,

KK23

and in phase space,

KK24

This clarifies the relation between the historical IMV terminology and the newer phase-space formulation: the “inverse” quantity is not a different observable, but a reciprocal reparameterization of the same valley–peak structure, with the advantage that phase-space VPM is exactly invariant to quanta exposure (Hendrickson et al., 1 Mar 2026).

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