Heterogeneous back-end-of-line integration of thin-film lithium niobate on active silicon photonics for single-chip optical transceivers (2512.07196v1)

Abstract: The explosive growth of artificial intelligence, cloud computing, and large-scale machine learning is driving an urgent demand for short-reach optical interconnects featuring large bandwidth, low power consumption, high integration density, and low cost preferably adopting complementary metal-oxide-semiconductor (CMOS) processes. Heterogeneous integration of silicon photonics and thin-film lithium niobate (TFLN) combines the advantages of both platforms, and enables co-integration of high-performance modulators, photodetectors, and passive photonic components, offering an ideal route to meet these requirements. However, process incompatibilities have constrained the direct integration of TFLN with only passive silicon photonics. Here, we demonstrate the first heterogeneous back-end-of-line integration of TFLN with a full-functional and active silicon photonics platform via trench-based die-to-wafer bonding. This technology introduces TFLN after completing the full CMOS compatible processes for silicon photonics. Si/SiN passive components including low-loss fiber interfaces, 56-GHz Ge photodetectors, 100-GHz TFLN modulators, and multilayer metallization are integrated on a single silicon chip with efficient inter-layer and inter-material optical coupling. The integrated on-chip optical links exhibit greater than 60 GHz electrical-to-electrical bandwidth and support 128-GBaud OOK and 100-GBaud PAM4 transmission below forward error-correction thresholds, establishing a scalable platform for energy-efficient, high-capacity photonic systems.