Bulk Ferroelectric Heterostructures for High Temperature Lead-Free Piezoelectrics (2507.09673v1)

Abstract: Remarkable exploitation of valence and lattice mismatch in epitaxial ferroelectric heterostructures generates physical effects not classically expected for perovskite oxides, such as 2D electron gas and polar skyrmions. However the widespread application of these interfacial properties and functionalities is impeded by the ultrathin layered structure and essential presence of underlying lattice-matched substrates for the deposition of epitaxial thin films. Here, we report a bottom-up pathway to synthesize bulk ferroelectric heterostructures (BFH) with periodic composition fluctuation (8 nm in wavelength) using elemental partitioning by cation diffusion, providing opportunities to exploit novel characteristics of hetero-epitaxial oxide thin films in bulk materials. Exemplar monolithic BiFeO3-BaTiO3 BFH ceramics described herein share common features with their thin film heterostructure counterparts, which facilitates control and stabilisation of ferroelectric polarisation along with a significant enhancement in Curie temperature, Tc, and functionality. BFH ceramics exhibit a record Tc (up to 824 {\deg}C) and a piezoelectric coefficient (d33 = 115 pC N-1 ), in comparison with other perovskite or non-perovskite solid solutions, providing sustainable solutions for emergent high temperature piezoelectric sensing, actuation and energy conversion applications. By creating BFH ceramics using different electromechanical boundary conditions, distinct morphologies of aliovalent A-site cation segregated regions along with different types of ferroelectric order are achieved. This formation mechanism provides unprecedented control over local ferroelectric ordering and domain stabilisation in BFH ceramics; it also paves the way to explore new types of functionality, beyond those achievable in both bulk ferroelectrics and thin film heterostructures.