Surface magnetoelectric driven spin dynamics in metallic antiferromagnets (2502.11793v1)

Abstract: Although magnetoelectric effects in metals are usually neglected, assuming that applied electric fields are screened by free charge carriers, the skin depth, defining the penetration depth of the fields, is non-zero and for THz electric fields typically reaches 400 nm. Hence, if the thickness of an antiferromagnetic film is of the order of tens of nm, electric field induced effects cannot be neglected. Here, we theoretically study the THz electric field induced spin dynamics in the metallic antiferromagnets $\mathrm{Mn}{2}\mathrm{Au}$ and $\mathrm{CuMnAs}$, whose spin arrangements allow them to exhibit a linear magnetoelectric effect. We shown that the THz magnetoelectric torque in metallic antiferromagnets is proportional to the time derivative of the THz electric field induced polarization. Our simulations reveal that the magnetoelectric driven spin dynamics is indeed not negligible and can fairly explain the previously published experimental results on antiferromagnetic dynamics excited by the THz pump pulses in $\mathrm{Mn}{2}\mathrm{Au}$ at the corresponding magnetoelectric susceptibility value $\alpha_{\mathrm{ME}} \simeq 2 \times 10^{-5}$ without involving other mechanisms. This value is about one order of magnitude smaller than that known for collinear and rare-earth-free antiferromagnets such as $\mathrm{Cr}{2}\mathrm{O}{3}$. For such a value of magnetoelectric response, it appears that the THz electric fields of realistic strengths of about 1 MV/cm are sufficient in order to achieve spin dynamics with the amplitudes sufficiently strong enough for switching of the antiferromagnetic N\'eel vector between the stable ground states. Thus, we contend that the experimental studies of the coherent dynamics of the antiferromagnetic N\'eel vector driven by the THz pulses in magnetoelectric metal films necessitate a careful consideration of the linear magnetoelectric effect.