Quasiparticle band structure and excitonic optical response in V2O5 bulk and monolayer

Abstract: The electronic band structure of V$_2$O$_5$ is calculated using an all-electron quasiparticle self-consistent (QS) $GW$ method, including electron-hole ladder diagrams in the screening of $W$. The optical dielectric function calculated with the Bethe-Salpeter equation exhibits excitons with large binding energy, consistent with spectroscopic ellipsometry data and other recent calculations. Sharp peaks in the direction perpendicular to the layers at high energy are found to be an artifact of the truncation of the numbers of bands included in the BSE calculation of the macroscopic dielectric function. The $\varepsilon_1(\omega=0)$ gives indices of refraction in good agreement with experiment. The excitons are charge transfer excitons with the hole primarily on oxygen and electrons on vanadium, but depending on which exciton, the distribution over different oxygens changes. The exciton wave functions have a spread of about 5-15\AA, with asymmetric character for the electron distribution around the hole depending on which oxygen the hole is fixed at. The monolayer quasiparticle gap increases inversely proportional to interlayer distance once the initial interlayer covalent couplings are removed which is thanks to the long-range nature of the self-energy and the reduced screening in a 2D system. The optical gap on the other hand is relatively independent of interlayer spacing because of the compensation between the self-energy gap shift and the exciton binding energy, both of which are proportional to the screened Coulomb interaction $\hat{W}$. Recent experimental results on very thin layer V$_2$O$_5$ obtained by chemical exfoliation provide experimental support for an increase in gap.