Enhancement in electromechanical properties of piezoelectric thin film through strain-induced domain alignment (2312.07410v1)

Abstract: This paper reports the impact of process-dependent structural deformation and lattice strain by doping, resulting in domain re-orientation along the a-axis. For this investigation, the smaller La3+ cation is introduced at A-site and the longitudinal and transverse piezocoefficient properties have been studied in Pb(Zr,Ti)O3 (PZT) film. Introducing smaller cations at the A-site leads to a reduction in the lattice parameter and improves the lattice matching with the Pt substrate. The XRD and HRTEM studies evidence this occurrence in both films. The HRTEM analysis also reveals the 30{\deg} long-range ordered domain alignment due to the lattice mismatch and 0{\deg} match domain alignment with the substrate in PZT and PLZT films respectively. The strain-induced 30{\deg} domain alignment in PZT enhances the longitudinal (d33d), whereas 0{\deg} domain alignment in PLZT enhances the transverse (d31) piezocoefficient properties. Incorporating 8% of La in the PZT lattice leads to a two-fold increase in the d31 value compared to PZT film.