Length scale of puddle formation in compensation-doped semiconductors and topological insulators (1703.10644v2)

Abstract: In most semiconductors and insulators the presence of a small density of charged impurities cannot be avoided, but their effect can be reduced by compensation doping, i.e. by introducing defects of opposite charge. Screening in such a system leads to the formation of electron-hole puddles, which dominate bulk transport, as first recognized by Efros and Shklovskii. Metallic surface states of topological insulators (TI) contribute extra screening channels, suppressing puddles. We investigate the typical length $l_p$, which determines the distance between puddles and the suppression of puddle formation close to metallic surfaces in the limit where the gap $\Delta$ is much larger than the typical Coulomb energy $E_c$ of neighboring dopants, $\Delta \gg E_c$. In particular, this is relevant for three dimensional Bi-based topological insulators, where $\Delta/E_c \sim 100$. Scaling arguments predict $l_p \sim (\Delta/E_c)^2$. In contrast, we find numerically that $l_p$ is much smaller and grows in an extended crossover regime approximately linearly with $\Delta/E_c$ for numerically accessible values, $\Delta/E_c \lesssim 35$. We show how a quantitative scaling argument can be used to extrapolate to larger $\Delta/E_c$, where $l_p \sim (\Delta/E_c)^2/\ln(\Delta/E_c)$. Our results can be used to predict a characteristic thickness of TI thin films, below which the sample quality is strongly enhanced.