Revealing puddles of electrons and holes in compensated topological insulators (1508.03212v1)

Abstract: Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the carrier density, but the bulk resistivity remains disappointingly small. We show that measurements of the optical conductivity in BiSbTeSe$_2$ pinpoint the presence of electron-hole puddles in the bulk at low temperatures, which is essential for understanding DC bulk transport. The puddles arise from large fluctuations of the Coulomb potential of donors and acceptors, even in the case of full compensation. Surprisingly, the number of carriers appearing within puddles drops rapidly with increasing temperature and almost vanishes around 40 K. Monte Carlo simulations show that a highly non-linear screening effect arising from thermally activated carriers destroys the puddles at a temperature scale set by the Coulomb interaction between neighbouring dopants, explaining the experimental observation semi-quantitatively. This mechanism remains valid if donors and acceptors do not compensate perfectly.