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Carrier heating and high-order harmonics generation in doped graphene by a strong ac electric field

Published 22 Nov 2010 in cond-mat.mes-hall and cond-mat.mtrl-sci | (1011.4841v3)

Abstract: The nonlinear response of electrons (holes) in doped graphene on ac pumping is considered theoretically for the frequency region above the energy relaxation rate but below the momentum and carrier-carrier scattering rates. Temporally-dependent heating of electrons by a strong ac field, which is described within the energy balance approach, leads to an effective generation of high-order harmonics. The efficiency of up-conversion of the 1 mm radiation into the third harmonic by a single-layer graphene is about 10{-7} at pumping level ~100 kW/cm2, room temperature, and concentration ~5 x 10{11} cm{-2}.

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