Papers
Topics
Authors
Recent
Assistant
AI Research Assistant
Well-researched responses based on relevant abstracts and paper content.
Custom Instructions Pro
Preferences or requirements that you'd like Emergent Mind to consider when generating responses.
Gemini 2.5 Flash
Gemini 2.5 Flash 163 tok/s
Gemini 2.5 Pro 50 tok/s Pro
GPT-5 Medium 36 tok/s Pro
GPT-5 High 35 tok/s Pro
GPT-4o 125 tok/s Pro
Kimi K2 208 tok/s Pro
GPT OSS 120B 445 tok/s Pro
Claude Sonnet 4.5 36 tok/s Pro
2000 character limit reached

Phase Noise in RF and Microwave Amplifiers (1001.2047v2)

Published 13 Jan 2010 in physics.ins-det and physics.optics

Abstract: Understanding the amplifier phase noise is a critical issue in numerous fields of engineering and physics, like oscillators, frequency synthesis, telecommunications, radars, spectroscopy, in the emerging domain of microwave photonics, and in more exotic domains like radio astronomy, particle accelerators, etc. This article analyzes the two main types of phase noise in amplifiers, white and flicker. White phase noise results from adding white noise to the RF spectrum around the carrier. For a given amount of RF noise added, noise is proportional to the inverse of the carrier power. By contrast, the 1/f coefficient is a constant parameter of the amplifier, in a wide range of carrier power. This fact has amazing consequences on different amplifier topologies. Connecting m equal amplifiers in parallel, flicker is 1/m times that of one device. Cascading m equal amplifiers, flicker is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in dB) due to positive feedback (regeneration), which for integer m is similar to the case of m amplifiers, we find that flicker is m2 times that of the amplifier alone. Starting from the fact that near-dc flicker exists in all electronic devices, although generally not accessible from outside, the simplest model for the 1/f phase noise is that the near-dc 1/f noise phase-modulates the carrier through some parametric effect in the semiconductor. This model predicts the behavior of the (simple) amplifier and of the different amplifier topologies. Numerous measurements on amplifiers from different technologies and frequencies (HF to microwaves), also including some obsolete amplifiers, validate the theory.

Summary

We haven't generated a summary for this paper yet.

Lightbulb Streamline Icon: https://streamlinehq.com

Continue Learning

We haven't generated follow-up questions for this paper yet.

List To Do Tasks Checklist Streamline Icon: https://streamlinehq.com

Collections

Sign up for free to add this paper to one or more collections.