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Half-Metallicity in Undoped and Boron Doped Graphene Nanoribbons in Presence of Semi-local Exchange-Correlation Interactions (0712.4130v1)

Published 26 Dec 2007 in cond-mat.mtrl-sci

Abstract: We perform density functional calculations on one-dimensional zigzag edge graphene nano-ribbons (ZGNRs) of different widths, with and without edge doping including semi-local exchange-correlations. Our study reveals that, although the ground state of edge passivated (with hydrogen) ZGNRs prefers to be anti-ferromagnetic, the doping of both the edges with Boron atoms stabilizes the system in a ferromagnetic ground state. Both the local and semi-local exchange-correlations result in half-metallicity in edge passivated ZGNRs at a finite cross-ribbon electric field. However, the ZGNR with Boron edges shows half-metallic behavior irrespective of the ribbon-width even in absence of electric field and this property sustains for any field strength, opening a huge possibility of applications in spintronics.

Citations (164)

Summary

Analysis of Half-Metallicity in Graphene Nanoribbons with Boron Doping

The paper by Sudipta Dutta and Swapan K. Pati explores the electronic properties of zigzag edge graphene nanoribbons (ZGNRs) through density functional theory calculations, focusing on the effects of boron doping and semi-local exchange-correlation interactions. This paper leverages the generalized gradient approximation within the ab initio framework, specifically utilizing the SIESTA package for spin-polarized calculations across varying nanoribbon widths. The research addresses discrepancies in the literature regarding half-metallicity in ZGNRs and presents a comprehensive evaluation of spin transport phenomena under varying conditions.

Key Findings

  • Antiferromagnetic to Ferromagnetic Transition: The paper discerns a transition from antiferromagnetic to ferromagnetic ground states upon boron doping at both edges of ZGNRs. The undoped, hydrogen-passivated edges maintain antiferromagnetic states, stabilized by the small energy difference of a few meV between competing states.
  • Half-Metallicity Under External Electric Fields: In the case of hydrogen-passivated ZGNRs, half-metallicity is contingent upon the presence of a finite external electric field, with the critical field strength declining as ribbon width increases. This half-metallic behavior is characterized by zero band gap for electrons of one spin orientation and a finite gap for the opposite spin.
  • Persistent Half-Metallicity with Boron Doping: Notably, boron doping preserves half-metallicity independently of electric field application and ribbon width. This robustness in spin-selective conductivity is attributable to the distinctive electronic structure alterations induced by boron substitution, which particularly influences density of states through edge-localized orbital contributions.

Implications

The findings indicate promising applications in spintronics, particularly leveraging the inherent half-metallic properties of boron-doped ZGNRs. These results suggest viability in device contexts where consistent spin polarization at ambient conditions is required, unaffected by external electric fields. This could potentially streamline the integration of graphene-based magnetic-sensitive components in nanoscale architectures. Additionally, the paper refutes claims in prior studies suggesting spin-selected semiconducting behavior in ZGNRs governed by non-local exchange-correlation interactions, highlighting the significance of incorporating semi-local interactions in predictive models.

Future Directions

The research sets the stage for further experimental validations and applications, particularly focusing on practical integration mechanisms in spintronic devices. Future explorations might incorporate temperature-dependent analysis and device-scale studies to quantify application-specific benefits. Expanding on the modeling to incorporate complex interactions and larger system sizes would provide a deeper understanding and refine the material's potential in real-world applications.

In conclusion, the paper presents a rigorous exploration of ZGNR electronic properties, offering critical insights into material behavior as influenced by doping and exchange-correlation effects. This contributes significantly to theoretical understanding and practical applicability considerations in nano-engineering domains.

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