High-temperature scattering effects on linear transverse exciton transport

Determine how high-temperature impurity- and phonon-induced skew-scattering and side-jump processes affect the linear transverse exciton transport identified in valley-layer-coupling two-dimensional materials, particularly in the zero-exciton-Berry-curvature regime.

Background

The analysis considers linear transverse exciton transport in the zero-Berry-curvature limit and does not incorporate high-temperature or strong-disorder corrections arising from impurity- and phonon-induced skew-scattering and side-jump processes. Prior work on exciton valley Hall transport indicates that these mechanisms can substantially modify the conductivity, with side-jump contributions potentially compensating Berry-curvature-induced anomalous velocity and skew scattering producing an approximately temperature-linear conductivity. The unresolved issue is whether analogous processes significantly alter the anisotropy-driven linear transverse exciton transport studied for TSCO and related valley-layer-coupling materials.

References

Because our analysis focuses on the zero-Berry-curvature limit, how analogous high-temperature scattering processes affect the LTET identified here remains an important open question.

— Unconventional linear transverse exciton transport in valley-layer coupling two-dimensional materials  (2609.18035 - Li, 16 Sep 2026) in Section "Outlook and discussions"

Clarifying how these channels evolve with $\theta $, $E_{\perp }$, and $T$, and whether they can be cleanly disentangled experimentally, is an important direction for future work.

— Unconventional linear transverse exciton transport in valley-layer coupling two-dimensional materials  (2609.18035 - Li, 16 Sep 2026) in Section "Outlook and discussions"