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Semiconductors and Dirichlet-to-Neumann maps
Published 22 Jan 2021 in math.AP, cs.NA, and math.NA | (2101.09248v1)
Abstract: We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data.
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