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Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids (2002.00628v2)

Published 3 Feb 2020 in cond-mat.mtrl-sci

Abstract: We include the treatment of quadrupolar fields beyond the Fr\"ohlich interaction in the first-principles electron-phonon vertex in semiconductors. Such quadrupolar fields induce long-range interactions that have to be taken into account for accurate physical results. We apply our formalism to Si (nonpolar), GaAs, and GaP (polar) and demonstrate that electron mobilities show large errors if dynamical quadrupoles are not properly treated.

Citations (51)

Summary

Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids

The research presented in the paper "Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids" explores the necessary advancement in the treatment of electron-phonon (e-ph) interactions by incorporating dynamical quadrupolar fields beyond the conventional Fröhlich interaction. This paper is a significant contribution to the understanding of e-ph interactions in semiconductors, highlighting that accurate assessments of electron mobility demand accounting for long-range interactions induced by dynamical quadrupoles.

Summary of Findings

The paper critically evaluates the current approaches in describing e-ph interactions, especially the limitations of locality-based methods under dense reciprocal-space wave vector grids. Traditional approaches rely heavily on Fröhlich divergence in polar materials, which focuses primarily on dipole interactions. These methods can fail to capture essential long-range effects due to incomplete screening in insulators and semiconductors.

Key Contributions:

  • Introduction of terms beyond the dipole interactions, specifically dynamical quadrupolar interactions, as initially proposed by Vogl and further refined using density-functional perturbation theory (DFPT).
  • Applications on materials such as Si, GaAs, and GaP reveal that electron mobility calculations exhibit significant errors when quadrupolar interactions are omitted. For instance, errors in mobility calculations can exceed 30% in GaAs due to neglecting these quadrupolar effects.
  • Utilizing a new implementation within the Abinit software package, which integrates the calculation of dynamical quadrupoles, this paper emphasizes the need to incorporate the quadrupole interaction in both nonpolar and polar materials for accurate e-ph predictions.

Implications and Future Directions

The implications of this work are profound for the computational paper of electron transport properties. The correct treatment of dynamical quadrupoles ensures improved predictions of carrier mobility and electronic properties in semiconductors, thus influencing various technological applications, from semiconductor manufacturing to the development of more efficient photonic devices.

Practical and Theoretical Impact:

  • The methodology proposed could be pivotal in re-evaluating existing calculations of mobility in other semiconductor materials, suggesting that the performance in many current devices might be inaccurately predicted.
  • The findings may invigorate a re-examination of past computational studies, potentially fostering new models that incorporate dynamical quadrupoles routinely, broadening the scope of accurate e-ph interaction analysis.

Speculation on AI Developments:

In light of these advancements, machine learning techniques could be harnessed to automate and refine the parameter adjustments required for quadrupole incorporation in complex systems. This paper’s results might stimulate AI-driven approaches to expedite the computation and prediction of physical properties associated with e-ph interactions, significantly enhancing the design of high-performance materials.

In conclusion, this paper underscores the importance of going beyond traditional Fröhlich interactions in e-ph computations, laying a groundwork that could enable physicists and engineers to achieve greater precision in modeling and understanding semiconductors at a microscopic level. The formalism proposed here promises to be crucial for the next generation of accurate computational approaches in condensed matter physics.

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