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Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

Published 5 Oct 2016 in cond-mat.mes-hall and quant-ph | (1610.01406v1)

Abstract: An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funneling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. These arrays of non-classical light emitters open new vistas for two-dimensional semiconductors in cavity quantum electrodynamics and integrated on-chip quantum photonics.

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