Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations (1412.3932v2)

Abstract: Synchrotron radiation x-ray absorption and emission spectroscopy techniques, complemented by high-resolution transmission electron microscopy methods and density functional theory calculations are employed to investigate the effect of Mn in Al${x}$Ga${1-x}$N:Mn samples with an Al content up to 100%. The atomic and electronic structure of Mn is established together with its local environment and valence state. A dilute alloy without precipitation is obtained for Al${x}$Ga${1-x}$N:Mn with Al concentrations up to 82%, and the surfactant role of Mn in the epitaxial process is confirmed.