Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier

Abstract: Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating a Fermi surface spin texture reminiscent of spin vortices of different radii. This can be exploited in a spin-based field-effect transistor (spin- FET), where the Rashba system forms a 2D channel between ferromagnetic (FM) source and drain electrodes. The electron spin precesses when propagating through the Rashba channel and spin orientations (anti)parallel to the drain give (low) high conductivity. Crucial is the possibility to tune the momentum splitting, and consequently the precession angle, through an external parameter. Here we show that this can be achieved in Pb quantum well states through the doping dependence of the Schottky barrier, opening up the possibility of a terahertz spin-FET.