Lowering Insulator-to-Metal Transition Temperature of Vanadium Dioxide Thin Films via Co-Sputtering, Furnace Oxidation and Thermal Annealing (2504.17976v1)

Abstract: Thermochromic vanadium dioxide thin films have attracted much attention recently for constructing variable-emittance coatings upon its insulator-metal phase transition for dynamic thermal control. However, fabrication of high-quality vanadium dioxide thin films in a cost-effective way is still a challenge. In addition, the phase transition temperature of vanadium dioxide is around 68{\deg}C, which is higher than most of terrestrial and extraterrestrial applications. In this study, we report the fabrication and characterization of tungsten-doped vanadium dioxide thin films with lowered phase transition temperatures via co-sputtering, furnace oxidation and thermal annealing processes for wider application needs. The doping is achieved by co-sputtering of tungsten and vanadium targets while the doping level is varied by carefully controlling the sputtering power for tungsten. Doped thin film samples of 30-nm thick with different tungsten atomic concentrations are prepared by co-sputtering onto undoped silicon wafers. Optimal oxidation time of 4 hours is determined to reach full oxidation in an oxygen-rich furnace environment at 300{\deg}C. Systematic thermal annealing study is carried out to find the optimal annealing temperature and time. By using an optical cryostat coupled to an infrared spectrometer, the temperature-dependent infrared transmittance of fully annealed tungsten-doped vanadium dioxide thin films are measured in a wide temperature range from -60{\deg}C to 100{\deg}C. The phase transition temperature is found to decrease at 24.5{\deg}C per at.% of tungsten doping, and the thermal hysteresis between heating and cooling shrinks at 5.5{\deg}C per at.% from the fabricated vanadium dioxide thin films with tungsten doping up to 4.1 at.%.