Strain Engineering to Enhance Spin Coherence in Silicon-Vacancy Centres
This paper presents a significant advancement in the field of quantum coherence control by demonstrating a novel approach to mitigate the detrimental effects of phonon interactions on the coherence of a single electronic spin qubit in silicon-vacancy (SiV) centers in diamond. The paper effectively utilizes strain engineering through a nano-electro-mechanical system (NEMS) to manipulate the local strain environment of the SiV centers without altering the system temperature.
Key Findings and Methodology
The authors highlight the susceptibility of the electronic orbitals of SiV centers to local strain, which inherently causes high sensitivity to phonons, leading to decoherence. This susceptibility has been leveraged by using a NEMS device, which comprises a single-crystal diamond cantilever with metal electrodes, to create and control static strain on the SiV centres. This method allows significant optical tunability and enhanced spin coherence by influencing the electronic levels of the emitter to suppress its thermal phonon interactions.
The research experimentally shows that adjusting the strain in the SiV centers can alter their ground state (GS) and excited state (ES) orbital splittings, enabling researchers to probe the phonon density of states and their effect on phonon-mediated spin relaxation. Through controlled strain application, the authors achieve an orbital splitting increase up to 1.2 THz, markedly improving the SiV's spin coherence time from 40 nanoseconds to 0.25 microseconds.
Numerical Insights
Quantitative measures indicate that by controlling the orbital splitting, the number of acoustic phonon modes coupled with the GS is influenced, resulting in accelerated phonon processes at low frequencies but suppressed phonon absorption at high orbital splittings (>120 GHz at 4K). This phenomenon correlates with reduced phonon occupation at elevated splittings, contributing significantly to enhanced spin coherence.
The research also translates into practical applications, such as optical access to the SiV system via resonance laser excitation. This excitation forms coherent superpositions in spin qubits with significantly narrowed linewidths as strain increases, showcasing potential utility for quantum memory applications akin to NV centers. The longest reported T2 was on par with NV centers without dynamical decoupling strategies, emphasizing the method's effectiveness.
Implications and Future Directions
This work not only demonstrates a robust approach to enhance quantum coherence in solid-state systems but proposes a pathway towards scalable quantum technologies using diamond as a substrate. The authors suggest that similar strain engineering methods can be applied to other emitters or spin-orbit coupled systems. Moreover, this method could eventually support photonic quantum networks by enabling indistinguishable photon generation.
Future research avenues include leveraging dynamical decoupling techniques to further mitigate environmental noise, utilizing phonons as quantum resources via coherent coupling with mechanical modes, and realizing phonon-mediated two-qubit gates. These approaches may significantly influence the development of multifunctional quantum systems entailing phonon-based quantum states as intermediaries or interfaces with existing quantum platforms like superconducting qubits.
Overall, the research presents a compelling case for employing strain engineering in optimizing quantum coherence of solid-state emitters, highlighting its potential to bring forth realizable advances in constructing scalable quantum devices.