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Crystal Transformer: Self-learning neural language model for Generative and Tinkering Design of Materials (2204.11953v1)

Published 25 Apr 2022 in cond-mat.mtrl-sci and cs.LG

Abstract: Self-supervised neural LLMs have recently achieved unprecedented success, from natural language processing to learning the languages of biological sequences and organic molecules. These models have demonstrated superior performance in the generation, structure classification, and functional predictions for proteins and molecules with learned representations. However, most of the masking-based pre-trained LLMs are not designed for generative design, and their black-box nature makes it difficult to interpret their design logic. Here we propose BLMM Crystal Transformer, a neural network based probabilistic generative model for generative and tinkering design of inorganic materials. Our model is built on the blank filling LLM for text generation and has demonstrated unique advantages in learning the "materials grammars" together with high-quality generation, interpretability, and data efficiency. It can generate chemically valid materials compositions with as high as 89.7\% charge neutrality and 84.8\% balanced electronegativity, which are more than 4 and 8 times higher compared to a pseudo random sampling baseline. The probabilistic generation process of BLMM allows it to recommend tinkering operations based on learned materials chemistry and makes it useful for materials doping. Combined with the TCSP crysal structure prediction algorithm, We have applied our model to discover a set of new materials as validated using DFT calculations. Our work thus brings the unsupervised transformer LLMs based generative artificial intelligence to inorganic materials. A user-friendly web app has been developed for computational materials doping and can be accessed freely at \url{www.materialsatlas.org/blmtinker}.

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Authors (7)
  1. Lai Wei (68 papers)
  2. Qinyang Li (7 papers)
  3. Yuqi Song (21 papers)
  4. Stanislav Stefanov (2 papers)
  5. Edirisuriya M. D. Siriwardane (6 papers)
  6. Fanglin Chen (20 papers)
  7. Jianjun Hu (55 papers)
Citations (10)

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