Tuning the Topological Band Gap of Bismuthene with Silicon-based Substrate (2203.00114v1)

Abstract: Some meta-stable polymorphs of bismuth monolayer (bismuthene) can host topologically nontrivial phases. However, it remains unclear if these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. Using first-principles techniques we demonstrate that bismuthene polymorphs can become stable over silicon carbide (SiC), silicon (Si), silicon dioxide (SiO2) and that the proximity interaction in the heterostructures has a significant effect on the electronic structure of the monolayer, even when bonding is weak. We show that the van der Waals interactions and the breaking of the sublattice symmetry are the main factors driving changes in the electronic structure. Our work demonstrates that substrate interaction can strengthen the topological properties of bismuthene polymorphs and make them accessible for experimental investigation and technological applications.