INTPIX4NA -- new integration-type silicon-on-insulator pixel detector for imaging application (2107.12632v3)

Abstract: INTPIX4NA is an integration-type silicon-on-insulator pixel detector. This detector has a 14.1 x 8.7 mm^2 sensitive area, 425,984 (832 column x 512 row matrix) pixels and the pixel size is 17 x 17 um^2. This detector was developed for residual stress measurement using X-rays (the cos alpha method). The performance of INTPIX4NA was tested with the synchrotron beamlines of the Photon Factory (KEK), and the following results were obtained. The modulation transfer function, the index of the spatial resolution, was more than 50% at the Nyquist frequency (29.4 cycle/mm). The energy resolution analyzed from the collected charge counts is 35.3%--46.2% at 5.415 keV, 21.7%--35.6% at 8 keV, and 15.7%--19.4% at 12 keV. The X-ray signal can be separated from the noise even at a low energy of 5.415 keV at room temperature (approximately 25--27 degree Celsius). The maximum frame rate at which the signal quality can be maintained is 153 fps in the current measurement system. These results satisfy the required performance in the air and at room temperature (approximately 25--27 degree Celsius) condition that is assumed for the environment of the residual stress measurement.

• The paper presents the INTPIX4NA, an integration-type silicon-on-insulator pixel detector designed for precise residual stress measurements using synchrotron X-ray beams.
• The paper reports key performance metrics including a spatial resolution over 50% MTF at the Nyquist frequency and energy resolutions ranging from 15.7% to 46.2% across various X-ray energies.
• The paper validates its practical reliability through a sensitive area of 14.1 × 8.7 mm² with 425,984 pixels and a high frame rate of up to 153 fps under room temperature conditions.

The paper "INTPIX4NA -- New Integration-Type Silicon-On-Insulator Pixel Detector for Imaging Application" introduces the INTPIX4NA, a silicon-on-insulator pixel detector designed for imaging applications, particularly residual stress measurement using X-rays. This advanced detector features a sensitive area of 14.1 x 8.7 mm² and consists of a matrix of 425,984 pixels arranged in 832 columns and 512 rows. Each pixel measures 17 x 17 μm².

Key performance metrics were tested using synchrotron beamlines at the Photon Factory (KEK). The results reveal notable specifications:

• Spatial Resolution: The modulation transfer function (MTF), which indicates spatial resolution, exceeded 50% at the Nyquist frequency (29.4 cycles/mm). This ensures sharp imaging detail.
• Energy Resolution: At different energy levels, the energy resolution was characterized by charge count analysis:
  • 35.3% to 46.2% at 5.415 keV
  • 21.7% to 35.6% at 8 keV
  • 15.7% to 19.4% at 12 keV
• Signal-to-Noise Ratio: The detector can effectively separate X-ray signals from noise, even at a low energy of 5.415 keV, and operates effectively at room temperatures (approximately 25–27°C).
• Frame Rate: It can maintain high signal quality at a maximum frame rate of 153 frames per second (fps) in the current measurement setup.

Overall, the performance characteristics of INTPIX4NA satisfy the requirements for residual stress measurement under room temperature and air conditions. The paper highlights its suitability and reliability for precise imaging tasks in challenging settings.