Band Alignments of Emerging Wurtzite BAlN and BGaN Semiconductors (2005.08407v1)

Abstract: The wurtzite III-Nitrides family of semiconductors, which include the compounds GaN, InN, and AlN, along with their derivative ternary alloys, is highly priced for its wide range of bandgaps, lattice constant tunability, high breakdown voltages, and thermal and chemical stability. The incorporation of wurtzite BxAl1-xN and BxGa1-xN ternary alloys into this family introduces an even larger range of bandgaps, lattice constants, and refractive indices, which indicates their potential in the fields of optoelectronics and power devices. An important parameter in the design of cutting edge devices is the band alignment between the different alloys. In our work, the natural band offset values between wz-BxAl1-xN and wz-BxGa1-xN alloys were investigated using ab initio simulations. The Vienna Ab initio Simulation Package was used to perform density functional theory calculations in order to obtain lattice parameters, band gap energies, and relative electrostatic potential lineups. Through these calculations, we were able to quantify the natural band offset values for the materials of interest, and as such were able to identify some general qualitative features associated with the different alloys we studied. As the growth and fabrication of wz-BAlN and wz-BGaN crystals matures, we hope that our results can provide a theoretical basis for design and analysis of cutting-edge devices.