Highly tunable quantum light from moiré trapped excitons (2001.04305v2)

Abstract: Photon antibunching, a haLLMark of quantum light, has been observed in the correlations of light from isolated atomic and atomic-like solid-state systems. Two-dimensional semiconductor heterostructures offer a unique method to create a quantum light source: a small lattice mismatch or relative twist in a heterobilayer can create moir\'e trapping potentials for excitons which are predicted to create arrays of quantum emitters. While signatures of moir\'e trapped excitons have been observed, their quantum nature has yet to be confirmed. Here we report photon antibunching from single moir\'e trapped interlayer excitons in a heterobilayer. Via polarization resolved magneto-optical spectroscopy, we demonstrate the discrete anharmonic spectra arise from bound band-edge electron-hole pairs trapped in moir\'e potentials. Finally, using an out-of-plane electric field, we exploit the large permanent dipole of interlayer excitons to achieve large DC Stark tuning, up to 40 meV, of the quantum emitters. Our results confirm the quantum nature of moir\'e confined excitons and open opportunities to investigate their inhomogeneity and interactions between the emitters or tune single emitters into resonance with cavity modes or other emitters.