Landau Levels of Bilayer Graphene in a WSe$_2$/Bilayer Graphene van der Waals Heterostructure (1910.10875v2)

Abstract: Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe$_2$ sheet dramatically impacts the energies of the symmetry-broken low Landau levels of bilayer graphene, possibly due to screening. We present a systematic study of the magnetic field and electrical displacement field dependences of the Landau level gaps at filling factor $\nu$ = 1, 2, 3, and compare to BN encapsulated pristine bilayer graphene. The exchange-dominated energy splitting between the N = 0 and 1 orbital wave functions is significantly enhanced, which leads to a modified phase diagram at filling factor $\nu$ = 0 and larger energy gaps at $\nu$ = 1 and 3 in WSe$_2$/bilayer graphene heterostructures. The exchange-enhanced spin gap at $\nu$ = 2, on the other hand, is reduced by approximately two-fold. Our results demonstrate a possible way to engineer quantum Hall phenomena via van der Waals heterostructures.