Point defects in the 1$T'$ and 2$H$ phases of single-layer MoS$_2$: A comparative first-principles study (1804.04575v1)

Abstract: The metastable 1$T'$ phase of layered transition metal dichalcogenides has recently attracted considerable interest due to electronic properties, possible topological electronic phases and catalytic activity. We report a comprehensive theoretical investigation of intrinsic point defects in the 1$T'$ crystalline phase of single-layer molybdenum disulfide (1$T'$-MoS$_2$), and provide comparison to the well-studied semiconducting 2$H$ phase. Based on density functional theory calculations, we explore a large number of configurations of vacancy, adatom and antisite defects and analyse their atomic structure, thermodynamic stability, electronic and magnetic properties. The emerging picture suggests that, under thermodynamic equilibrium, 1$T'$-MoS$_2$ is more prone to hosting lattice imperfections than the 2$H$ phase. More specifically, our findings reveal that the S atoms that are closer to the Mo atomic plane are the most reactive sites. Similarly to the 2$H$ phase, S vacancies and adatoms in 1$T'$-MoS$_2$ are very likely to occur while Mo adatoms and antisites induce local magnetic moments. Contrary to the 2$H$ phase, Mo vacancies in 1$T'$-MoS$_2$ are expected to be an abundant defect due to the structural relaxation that plays a major role in lowering the defect formation energy. Overall, our study predicts that the realization of high-quality flakes of 1$T'$-MoS$_2$ should be carried out under very careful laboratory conditions but at the same time the facile defects introduction can be exploited to tailor physical and chemical properties of this polymorph.