2000 character limit reached
Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb (1707.09024v2)
Published 27 Jul 2017 in cond-mat.mes-hall
Abstract: We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.