2000 character limit reached
Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS$_2$ van der Waals Heterostructures (1701.08619v2)
Published 30 Jan 2017 in cond-mat.mes-hall
Abstract: We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm${2}$/(V s) at a density of 3 $\times$ 10${12}$~cm${-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.