Concepts of Ferrovalley Material and Anomalous Valley Hall Effect (1604.05833v3)

Abstract: Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to ferroelectric materials with spontaneous charge polarization in electronics, as well as ferromagnetic materials with spontaneous spin polarization in spintronics, here we introduce a new member of ferroic-family, i.e. a ferrovalley material with spontaneous valley polarization. Combining a two-band kp model with first-principles calculations, we show that 2H-VSe2 monolayer, where the spin-orbit coupling coexists with the intrinsic exchange interaction of transition-metal-d electrons, is such a room-temperature ferrovalley material. We further predict that such system could demonstrate many distinctive properties, for example, chirality-dependent optical band gap and more interestingly, anomalous valley Hall effect. On account of the latter, a series of functional devices based on ferrovalley materials, such as valley-based nonvolatile random access memory, valley filter, are contemplated for valleytronic applications.