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Topological Surface Transport in Epitaxial SnTe Thin Films Grown on Bi2Te3 (1305.2470v2)

Published 11 May 2013 in cond-mat.mes-hall and cond-mat.mtrl-sci

Abstract: The topological crystalline insulator SnTe has been grown epitaxially on a Bi2Te3 buffer layer by molecular beam epitaxy. In a 30-nm-thick SnTe film, p- and n-type carriers are found to coexist, and Shubnikov--de Haas oscillation data suggest that the n-type carriers are Dirac fermions residing on the SnTe (111) surface. This transport observation of the topological surface state in a p-type topological crystalline insulator became possible due to a downward band bending on the free SnTe surface, which appears to be of intrinsic origin.

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